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fdmc2674


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                                                                                                                                                                 FDMC2674 N-Channel UltraFET Trench MOSFET
                                                                                                                                      January 2007

     FDMC2674                                                                                                                                           tm
     N-Channel UltraFET Trench MOSFET
     220V, 7.0A, 366m
     Features                                                                       General Description
           Max rDS(on) = 366m at VGS = 10V, ID = 1.0A                               UltraFET device combines characteristics that enable
           Typ Qg = 12.7nC at VGS = 10V                                             benchmark efficiency in power conversion applications.
                                                                                    Optimized for rDS(on), low ESR, low total and Miller gate charge,
           Low Miller charge                                                        these devices are ideal for high frequency DC to DC converters.
           Low Qrr Body Diode
                                                                                    Application
           Optimized efficiency at high frequencies
           UIS Capability ( Single Pulse and Repetitive Pulse)                           DC/DC converters and Off-Line UPS

           RoHS Compliant                                                                Distributed Power Architectures




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                            8                                            D
                        7                                            D                                     D     5                          4 G
                    6                                            D
                5
                                                            D                                              D     6                          3 S

                                                                                                           D     7                          2 S
                                                 1                                               G
                                             2                                                             D
                                         3                                                   S                   8                          1 S
                                     4                                                   S
                                                                                    S
                                                     Power 33

     MOSFET Maximum Ratings TA = 25



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