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                                                                                                                                                       FDMS2672 N-Channel UltraFET Trench MOSFET
                                                                                                                              February 2007

     FDMS2672                                                                                                                                   tm

     N-Channel UltraFET Trench MOSFET
     200V, 20A, 77m
     Features                                                               General Description
           Max rDS(on) = 77m at VGS = 10V, ID = 3.7A                        UItraFET devices combine characteristics that enable
           Max rDS(on) = 88m at VGS = 6V, ID = 3.5A                         benchmark efficiency in power conversion applications.
                                                                            Optimized for rDS(on), low ESR, low total and Miller gate charge,
           Low Miller Charge                                                these devices are ideal for high frequency DC to DC converters.
           RoHS Compliant                                                   Application
                                                                              DC - DC Conversion




                Pin 1                S      S       S   G

                                                                             D    5                              4 G

                                                                             D    6                              3 S

                                                                             D    7                              2 S

                                                                             D    8                              1 S
                                 D   D          D   D
                                Power 56 (Bottom view)



     MOSFET Maximum Ratings TA = 25

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