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                                                                                                                                                 FDN342P
                                                                                                                         August 1999




   FDN342P
   P-Channel 2.5V Specified PowerTrenchTM MOSFET

   General Description                                                         Features
   This P-Channel 2.5V specified MOSFET is produced in                            -2 A, -20 V. RDS(ON) = 0.08  @ VGS = -4.5 V
   a rugged gate version of Fairchild Semiconductor's
   advanced PowerTrench process. It has been optimized                                        RDS(ON) = 0.13  @ VGS = -2.5 V.
   for power management applications for a wide range
                                                                                  Rugged gate rating (

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