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                                                                                                                                                     FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET
                                                                                                                           Fe bruary 2009


FDN361BN
30V N-Channel, Logic Level, PowerTrench MOSFET
General Description                                                            Features
These N-Channel Logic Level MOSFETs are produced                               x 1.4 A, 30 V.        RDS(ON) = 110 m: @ VGS = 10 V
using     Fairchild      Semiconductor's   advanced
PowerTrench process that has been especially tailored                                                RDS(ON) = 160 m: @ VGS = 4.5 V
to minimize the on-state resistance and yet maintain
superior switching performance.
                                                                               x Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,                           x Industry standard outline SOT-23 surface mount
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are                                  package using proprietary SuperSOTTM-3 design for
needed in a very small outline surface mount package.                                 superior thermal and electrical capabilities

                                                                               x High performance trench technology for extremely
                                                                                      low RDS(ON)



                           D                                                                                   D




                                                     S
                                                                                                     G                 S

              SuperSOT -3
                            TM             G

 Absolute Maximum Ratings                                     o
                                                         TA=25 C unless otherwise noted

 Symbol                                    Parameter                                                     Ratings                       Units
 VDSS             Drain-Source Voltage                                                                       30                           V
 VGSS             Gate-Source Voltage                                                                       r 20                          V
 ID               Drain Current       

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