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                                                                                                                                          July 1998




  FDP7030BL/FDB7030BL
  N-Channel Logic Level PowerTrenchTM MOSFET

  General Description                                                                     Features

      This N-Channel Logic Level MOSFET has been designed                                   60 A, 30 V. RDS(ON) = 0.009  @ VGS = 10 V,
      specifically to improve the overall efficiency of DC/DC                                              RDS(ON) = 0.0120  @ VGS = 4.5 V.
      converters using either synchronous or conventional
      switching PWM controllers.                                                            Critical DC electrical parameters specified at elevated
                                                                                            temperature.
      These MOSFETs feature faster switching and lower gate
      charge than other MOSFETs with comparable RDS(on)                                     Rugged internal source-drain diode can eliminate the need
      specifications.                                                                       for an external Zener diode transient suppressor.
      The result is a MOSFET that is easy and safer to drive (even                          High performance trench technology for extremely low
      at very high frequencies), and DC/DC power supply designs                             RDS(ON).
      with higher overall efficiency.
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