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                                                                                                                November 1998



  FDS6875
  Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET

      General Description                                                               Features

   These P-Channel          2.5V specified MOSFETs are                                        -6 A, -20 V. RDS(ON) = 0.030  @ VGS = -4.5 V,
   produced using Fairchild Semiconductor's advanced                                                      RDS(ON) = 0.040  @ VGS = -2.5 V.
   PowerTrench process that has been especially tailored to
                                                                                              Low gate charge (23nC typical).
   minimize the on-state resistance and yet maintain low gate
   charge for superior switching performance.                                                 High performance trench technology for extremely low
   These devices are well suited for portable electronics                                     RDS(ON).
   applications: load switching and power management,
   battery charging and protection circuits.                                                  High power and current handling capability.




         SOT-23                    SuperSOTTM-6                SuperSOTTM-8                  SO-8                SOT-223                 SOIC-16




                                      D2
                               D2                                                                        5                           4
                          D1                   S
                   D1                        FD 75                                                       6                           3
                                              68
                                                                                                         7                           2
                                                                    G2
                                                               S2
                                                          G1                                             8                           1
                       SO-8                  pin 1
                                                     S1



 Absolute Maximum Ratings                                 TA = 25oC unless otherwise noted
 Symbol          Parameter                                                                                   FDS6875                                Units
 VDSS            Drain-Source Voltage                                                                           -20                                   V
 VGSS            Gate-Source Voltage                                                                            

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