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   Advanced Power MOSFET                                                                 IRFW/I550A
     FEATURES
                                                                                               BVDSS = 100 V
           Avalanche Rugged Technology
           Rugged Gate Oxide Technology
                                                                                               RDS(on) = 0.04 
           Lower Input Capacitance                                                             ID = 40 A
           Improved Gate Charge
           Extended Safe Operating Area
                    
                                                                                               D2-PAK                       I2-PAK
           175 C Operating Temperature
           Lower Leakage Current : 10 

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