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February 2009
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Power SOT N-Channel enhancement mode power field 7.2A, 30V. RDS(ON) = 0.035 @ VGS = 10V
effect transistors are produced using Fairchild's RDS(ON) = 0.05 @ VGS = 4.5V.
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize High density cell design for extremely low RDS(ON).
on-state resistance and provide superior switching
performance. These devices are particularly suited for low High power and current handling capability in a widely used
voltage applications such as DC motor control and DC/DC surface mount package.
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
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