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SEMICONDUCTOR BC856W/7W/8W
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
E
M B M
FEATURES DIM MILLIMETERS
A _
2.00 + 0.20
D
For Complementary With NPN Type BC846W/847W/848W. 2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
MAXIMUM RATING (Ta=25 ) K 0.00-0.10
L 0.70
CHARACTERISTIC SYMBOL RATING UNIT
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
BC856W -80 N
K
N
Collector-Base Voltage BC857W VCBO -50 V
1. EMITTER
BC858W -30
2. BASE
BC856W -65 3. COLLECTOR
Collector-Emitter
BC857W VCEO -45 V
Voltage
BC858W -30
BC856W -5 USM
Emitter-Base Voltage BC857W VEBO -5 V
BC858W -5
Collector Current IC -100 mA
Emitter Current IE 100 mA
Marking
Collector Power Dissipation PC 100 mW Lot No.
Junction Temperature Tj 150 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo