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SEMICONDUCTOR BCW29/30
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Complementary to BCW31/32 A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCBO -30 V N 1.00+0.20/-0.10
N
C
P 7
J
Collector-Emitter Voltage VCEO -20 V
M
K
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC * 350 mW
3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -65 150
* : Package Mounted On 99.9% Alumina 10 8 0.6mm. SOT-23
Marking
Lot No. Lot No.
Type Name
C1 Type Name
C2
BCW29 BCW30
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -30 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA -20 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -5 - - V
Collector Cut-off Current ICBO VCB=-30V - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V - - -100 nA
BCW29 110 - 220
DC Current Gain hFE VCE=-5V, IC=-2mA
BCW30 200 - 450
Collector-Emitter Saturation Voltage VCE(sat) IC=-10mA, IB=-0.5mA - - -0.25 V
Base-Emitter On Voltage VBE(ON) VCE=-5V, IC=-2mA -0.55 - -0.7 V
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 4 pF
VCE=-5V, IC=-0.2mA
Noise Figure NF - - 10 dB
RS=2k , f=1kHz
1999. 12. 29 Revision No : 1 1/1
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