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SEMICONDUCTOR BF421
TECHNICAL DATA SILICON PNP TRIPLE DIFFUSED TYPE
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION.
COLOR TV CHROMA OUTPUT APPLICATIONS.
B C
FEATURES
High Voltage : VCEO>-300V
A
Complementary to BF420.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO -300 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO -300 V M 0.45 MAX
N 1.00
1 2 3
C
Emitter-Base Voltage VEBO -5 V
L
M
DC IC -50 1. EMITTER
2. COLLECTOR
Collector Current mA
ICP 3. BASE
Peak -100
Collector Power Dissipation PC 625 mW
Base Current IB -50 mA TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -65 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=-200V, IE=0 - - -10 nA
Collector Cut-off Current ICBO
VCB=-200V, IE=0, Tj=150 - - -10 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -50 nA
DC Current Gain hFE VCE=-20V, IC=-25mA 50 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-30mA, IB=-5mA - - -0.6 V
Base-Emitter Voltage VBE VCE=-20V, IC=-25mA - -0.75 - V
Transition Frequency fT VCE=-10V, IC=-10mA 60 - - MHz
Reverse Transfer Capacitance Cre VCB=-30V, IE=0, f=1MHz - - 1.6 pF
2002. 6. 25 Revision No : 3 1/3
BF421
I C - VCE (LOW VOLTAGE REGION) h FE - I C
-60 500
COMMON
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
3.0 1.6 1.0 0.6 EMITTER 300 Ta=25 C
-50 Ta=25 C
DC CURRENT GAIN h FE
0.4 VCE =-20V
-40 0.3
100
-30 0.2 50
-10
0.15 30
-20 -5
0.1
I B =0.05mA
-10
10
0
0 5
0 -4 -8 -12 -16 -20 -24 -28 -0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
500 -5
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
300 V CE =-10V -3 Ta=25 C
DC CURRENT GAIN h FE
Ta=100 C
VOLTAGE VCE(sat) (V)
Ta=25 C
100 -1
Ta=-25 C
50 -0.5
30 -0.3
=10
I C/I B
5
10 -0.1
2
5 -0.05
-0.3 -1 -3 -10 -30 -100 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
-5 -50
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
-3 I C /IB =5 VCE =10V
VOLTAGE VCE(sat) (V)
-40
-1
-30
-0.5
C
00 C
Ta=-25 C
Ta=25
-0.3 -20
Ta=1
0 C
Ta=10 25
-25 -10
-0.1
-0.05 0
-0.3 -1 -3 -10 -30 -100 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)
2002. 6. 25 Revision No : 3 2/3
BF421
C ob .C re - V CB f T - IC
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
REVERSE TRANSFER CAPACITANCE C re (pF)
10 500
TRANSITION FREQUENCY f T (MHz)
I E =0
COMMON EMITTER
f=1MHz 300 Ta=25 C
8 Ta=25 C
VCE =-20V
6 100
VCE =-10V
4 50
30
C ob
2
C re
0 10
0 -40 -80 -120 -160 -200 -240 -280 -0.3 -1 -3 -10 -30
COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR CURRENT I C (mA)
P C - Ta SAFE OPERATING AREA
1000 -200
COLLECTOR POWER DISSIPATION
I C MAX.(PULSED) *
800 -100 1
COLLECTOR CURRENT I C (mA)
1m
I C MAX.(CONTINUOUS) 10 0ms
s
0m *
-50 s *
600 -30 *
P C (mW)
DC
OP
ER
AT
400 IO
-10 N
200 -5
-3 SINGLE NONREPETITIVE
*
PULSE Ta=25 C
0 CURVES MUST BE DERATED
0 40 80 120 160 200 LINEARLY WITH INCREASE
-1 IN TEMPERATURE.
AMBIENT TEMPERATURE Ta ( C)
-0.5
-3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V)
2002. 6. 25 Revision No : 3 3/3
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