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SEMICONDUCTOR KTA1834D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
Low Collector Saturation Voltage.
: VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A) A I
C
Large Collector Current J
DIM MILLIMETERS
: IC=-10A(dc) IC=-15A(10ms, single pulse)
D
A _
6.60 + 0.2
B _
6.10 + 0.2
Complementary to KTC5001D/L. C _ 0.2
5.0 +
_
D 1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
MAXIMUM RATING (Ta=25 ) F F L
M _
0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
CHARACTERISTIC SYMBOL RATING UNIT P
Q
1.00 + 0.10
0.95 MAX
Collector-Base Voltage VCBO -30 V 1. BASE
2. COLLECTOR
Collector-Emitter Voltage VCEO -20 V 3. EMITTER
Emitter-Base Voltag VEBO -6 V
IC -10 DPAK
Collector Current A
ICP -15
Base Current IB -2 A
A I
C
Collector Power Ta=25 1.0 J
PC W
D
Dissipation Tc=25 10
DIM MILLIMETERS
B
_
Junction Temperature Tj 150 A
B
6.60 + 0.2
_
6.10 + 0.2
_
5.0 + 0.2
Q
C
K
Storage Temperature Range Tstg -55 150 H P
D 1.10 +_ 0.2
_
E 9.50 + 0.6
G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-20V - - -10 A
Emitter Cut-off Current IEBO VEB=-5V - - -10 A
Collector-Base Breakdown Voltage BVCBO IC=-50 A -30 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -20 V
Emitter-Base Breakdown Voltage BVEBO IE=-50 A -6 V
hFE (1) (Note) VCE=-2V, IC=-0.5A 180 - 390
DC Current Gain
hFE (2) VCE=-2V, IC=-4.0A 82 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-4.0A, IB=-0.05A - -0.16 -0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=-4A, IB=-0.05A - -0.9 -1.2 V
Transition Frequency fT VCE=-5V, IE=1.5A, f=50MHz - 150 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 220 - pF
Note : hFE(1) Classification GR:180~390.
2003. 3. 27 Revision No : 5 1/3
KTA1834D/L
I C - V BE h FE - I C
-10 1k
V CE =-2V Ta=25 C
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
500
-1
300 VCE =-5V
-0.1
C
5 C
5 C VCE =-2V
150
V CE =-1V
Ta = 2
Ta=-5
100
Ta=
-0.01
50
-0.001 30
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -20
COLLECTOR EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT IC (A)
h FE - I C VCE(sat) - I C
2K -1K
V CE =-2V Ta=25 C
COLLECTOR SATURATION
DC CURRENT GAIN h FE
1K
VOLTAGE VCE(sat) (mV)
-300
500
Ta=150 C
300 -100
Ta=25 C
I C /I B =80
-30
Ta=-55 C 40
100
20
-10
50
30 -3
-0.01 -0.1 -1 -10 -20 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
VCE(sat) - I C VBE(sat) - I C
-1K -1K
I C /I B =80 I C /I B =80
COLLECTOR SATURATION
-300 -300
VOLTAGE VBE(sat) (mV)
VOLTAGE VCE(sat) (V)
BASE SATURATION
-100 -100 Ta=-55 C
Ta=-55 C Ta=25 C
-30 -30 Ta=150 C
Ta=25 C
Ta=150 C
-10 -10
-3 -3
-0.01 -0.1 -1 -10 -20 -0.01 -0.1 -1 -10 -20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
2003. 3. 27 Revision No : 5 2/3
KTA1834D/L
fT - IE C ob - VCE
1k 3K
COLLECTOR OUTPUT CAPACITANCE
TRANSITION FREQUENCY f T (MHz)
Ta=25 C Ta=25 C
500 V CE =-5V
f=1MHz
f=50MHz
300 I E =0A
1K
C ob (pF)
500
100
300
50
30
100
10 50
0.01 0.03 0.1 0.3 1 3 10 -0.1 -0.3 -1 -3 -10 -30 -100
EMITTER CURRENT I E (A) COLLECTOR-BASE VOLTAGE V CE (V)
C ib - VEB SAFE OPERATING AREA
EMITTER INPUT CAPACITANCE C ib (pF)
10K 30
Ta=25 C I C MAX(PULSE) *
5K f=1MHz 10
COLLECTOR CURRENT IC (A)
3K I C =0A
DC
10
10
3 OP
mS
0m
ER
S *
AT
*
1K 1 IO
N
Ta
500 =2
5
300 0.3 C
0.1
* SINGLE NONREPETITIVE
100 PULSE Tc=25 C
0.03
-0.05 -0.1 -0.3 -1 -3 -10 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
BASE-EMITTER VOLTAGE V EB (V) 0.01
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
COLLECTOR POWER DISSIPATION Pc (W)
12
1 Tc=25 C
1
10 2 Ta=25 C
8
6
4
2
2
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 27 Revision No : 5 3/3
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