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SEMICONDUCTOR KTA1040D/L
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
DPAK FOR SURFACE MOUNT APPLICATIONS.
A I
C J
FEATURES DIM MILLIMETERS
D
A _
6.60 + 0.2
Low Collector Saturation Voltage B _
6.10 + 0.2
C _
5.0 + 0.2
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ 0.2
B
D 1.10 +
E _
2.70 + 0.2
Straight Lead (IPAK, "L" Suffix) F _
2.30 + 0.1
M
H 1.00 MAX
Q
K
Complementary to KTC2020D/L.
E
I _
2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
MAXIMUM RATING (Ta=25 ) 1. BASE
2. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT 3. EMITTER
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V DPAK
Emitter-Base Voltage VEBO -7 V
Collector Current IC -3 A
A I
C J
Base Current IB -0.5 A
D
Collector Power Ta=25 1.0
B
DIM MILLIMETERS
PC W A _
6.60 + 0.2
Dissipation Tc=25 20 B _
6.10 + 0.2
_
Q
5.0 + 0.2
K
C
D _
1.10 + 0.2
Junction Temperature Tj 150 H P
E _
9.50 + 0.6
E
G F _
2.30 + 0.1
G _
0.76 + 0.1
Storage Temperature Range Tstg -55 150 H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -60 - - V
hFE(1)(Note) VCE=-5V, IC=-0.5A 100 - 300
DC Current Gain
hFE(2) VCE=-5V, IC=-3A 20 - -
Collector Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V
Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 45 - pF
Turn-on Time ton - 0.4 -
Switching Time Storage Time tstg - 1.7 - S
Fall Time tf - 0.5 -
Note : hFE(1) Classification Y:100~200, GR:150~300.
2003. 3. 27 Revision No : 5 1/2
KTA1040D/L
2003. 3. 27 Revision No : 5 2/2
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