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SEMICONDUCTOR KTA1046
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
INDUSTRIAL USE.
GENERAL PURPOSE APPLICATION.
A C
DIM MILLIMETERS
FEATURES
F
S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Low Collector Saturation Voltage E
C _
2.70 + 0.3
B
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
Complementary to KTC2026. F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
MAXIMUM RATING (Ta=25 ) D D N _
2.54 + 0.1
P _
6.8 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT Q _
4.5 + 0.2
R _
2.6 + 0.2
Collector-Base Voltage VCBO -60 V N N H S 0.5 Typ
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -7 V 1. BASE
Q
1 2 3
Collector Current IC -3 A 2. COLLECTOR
3. EMITTER
Base Current IB -0.5 A
Collector Power Ta=25 2
PC W TO-220IS
Dissipation Tc=25 20
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -60 - - V
hFE(1) (Note) VCE=-5V, IC=-0.5A 100 - 300
DC Current Gain
hFE(2) VCE=-5V, IC=-3A 20 - -
Collector Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V
Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 45 - pF
OUTPUT
Turn-on Time ton - 0.4 -
I B2 I B1
0
INPUT
IB1
15
Switching Time Storage Time tstg I B2
- 1.7 - S
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