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SEMICONDUCTOR KTB598
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
B C
FEATURES
Low Saturation Voltage
A
: VCE(sat)=-0.3V(Max.) at IC=-0.5A.
Complementary to KTD545. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
H J _
14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO -30 V M 0.45 MAX
N 1.00
C
Collector-Emitter Voltage VCEO -25 V 1 2 3
L
M
Emitter-Base Voltage VEBO -5 V 1. EMITTER
2. COLLECTOR
IC 3. BASE
Collector Current -1 A
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
hFE(1) (Note) VCE=-2V, IC=-50mA 70 - 400
DC Current Gain
hFE(2) VCE=-2V, IC=-1A(Pulse) 30 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.15 -0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V
Transition Frequency fT VCE=-10V, IC=-50mA - 180 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 25 - pF
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
2005. 10. 31 Revision No : 1 1/3
KTB598
I C - VCE I C - VCE
-800 -1000
I B =-10mA
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
A 0mA
0m I B=-1
A
A
2
0m
=-
0m
IB =-8mA -800
=-5
-600 IB
-10
IB
IB =-6mA
IB =
I B =-30mA
-600
I B =-5mA
-400 IB =-4mA
-400
I B =-3mA
IB =-2mA
-200
I B =-1mA -200
I B =-1mA
IB =0mA
0 0
0 -1 -2 -3 -4 -5 -6 -7 -8 0 -0.2 -0.4 -0.6 -0.8 -1.0
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - VBE VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
-1.4 -2.0
VCE =-2V IC /I B =10
COLLECTOR CURRENT IC (A)
-1.2 -1.0
VOLTAGE VCE (V)
-0.5
-1.0
-0.3
-0.8
-0.6 -0.1
0.05
-0.4
-0.03
-0.2
0 -0.01
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -10 -30 -100 -300 -1K -3K -10K
BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA)
f T - IC h FE - I C
TRANSITION FREQUENCY f T (MHz)
2K -500
VCE =-10V VCE =-2V
-300
1K
DC CURRENT GAIN h FE
500 -100
300 -50
-30
100
-10
50
-5
30 -3
10 -1
-1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K -3K -10K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2005. 10. 31 Revision No : 1 2/3
KTB598
SAFE OPERATING AREA
-10
COLLECTOR CURRENT IC (A)
IC max(Pulsed)
*2
-1
00
DC
m
s
O
Ta PER
=2 AT
5 IO
C N
-0.1
* SINGLE NONREPETITIVE
PULSE TC = 25 C
-0.01
-0.1 -1 -10 -100
COLLECTOR EMITTER VOLTAGE VCE(sat) (V)
2005. 10. 31 Revision No : 1 3/3
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