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>> Download ktb817b documenatation <<Text preview - extract from the document SEMICONDUCTOR KTB817B
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047B.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -140 V
Emitter-Base Voltage VEBO -6 V
DC IC -12
Collector Current A
Pulse ICP -15
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -0.1 mA
Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -0.1 mA
hFE (1) (Note) VCE=-5V, IC=-1A 60 - 200
DC Current Gain
hFE 2 VCE=-5V, IC=-6A 20 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-5A, IB=-0.5A - - -2.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-1A - - -1.5 V
Transition Frequency fT VCE=-5V, IC=-1A - 15 - MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 300 - pF
Turn On Time ton VCC=-20V - 0.25 -
Fall Time tf IC=1A=10 IB1=-10 IB2 - 0.53 - S
Storage Time tstg RL=20 - 1.61 -
Note : hFE(1) Classification O:60 120, Y:100 200
2011. 3. 18 Revision No : 0 1/3
KTB817B
2011. 3. 18 Revision No : 0 2/3
KTB817B
2011. 3. 18 Revision No : 0 3/3
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