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SEMICONDUCTOR KTC3003HV
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A
High Collector Voltage : VCBO=900V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 900 V
Collector-Emitter Voltage VCEO 530 V
Emitter-Base Voltage VEBO 9 V
DC IC 1.5
Collector Current A
Pulse ICP 3
Base Current IB 0.75 A
Collector Power Dissipation PC 1.1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 A
hFE(1) VCE=10V, IC=10mA 15 - 40
DC Current Gain *hFE(2) VCE=10V, IC=0.4A 20 - 40
hFE(3) VCE=10V, IC=1A 6 - -
Collector-Emitter IC=0.5A, IB=0.1A - - 0.8
VCE(sat) V
Saturation Voltage IC=1.5A, IB=0.5A - - 2.5
Base-Emitter IC=0.5A, IB=0.1A - - 1
VBE(sat) V
Saturation Voltage IC=1A, IB=0.25A - - 1.2
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 21 - pF
Transition Frequency fT VCE=10V, IC=0.1A 4 - - MHz
Turn-On Time ton - 1.1 - S
Storage Time tstg - 3.0 - S
Fall Time tf - 0.7 - S
*Note : hFE Classification R:20 35, O:25 40
2008. 5. 6 Revision No : 3 1/2
KTC3003HV
2008. 5. 6 Revision No : 3 2/2
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