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SEMICONDUCTOR KTD600K
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY POWER AMP, A
MEDIUM SPEED SWITCHING APPLICATIONS B D
C
E
FEATURES
F
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE. G
Complementary to KTB631K.
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
MAXIMUM RATING (Ta=25 ) E 3.5
F _
11.0 + 0.3
CHARACTERISTIC SYMBOL RATING UNIT G 2.9 MAX
M
H 1.0 MAX
Collector-Base Voltage VCBO 120 V J 1.9 MAX
O K _
0.75 + 0.15
N P
Collector-Emitter Voltage VCEO 120 V 1 2 3 L _
15.50 + 0.5
M _
2.3 + 0.1
Emitter-Base Voltage VEBO 5 V N _
0.65 + 0.15
1. EMITTER O 1.6
IC 1 2. COLLECTOR P 3.4 MAX
3. BASE
Collector Current A
ICP 2
Collector Power Ta=25 1.5
PC W TO-126
Dissipation Tc=25 8
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=50V, IE=0 - - 1 A
Emitter Cut of Current IEBO VEB=4V, IC=0 - - 1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
hFE(1) Note VCE=5V, IC=50mA 100 - 320
DC Current Gain
hFE(2) VCE=5V, IC=500mA 20 - -
Gain Bandwidth Product fT VCE=10V, IC=50mA - 130 - MHz
Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 20 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - 0.15 0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA - 0.85 1.2 V
I B1
Turn-on Time ton I B2 - 100 -
1 1
24
20u sec 100
Switching Time Turn-off Time toff - 500 - nS
1uF 1uF
-2V 12V
Storage Time tstg VCE =12V - 700 -
I C =10I B1 =-10I B2 =500mA
Note : hFE(1) Classification Y:100 200, GR:160 320
2003. 7. 24 Revision No : 3 1/2
KTD600K
I C - VCE VCE(sat) - I C
COLLECTOR EMITTER SATURATION
1.6 1.0
Tc=25 C I C /I B =10
COLLECTOR CURRENT I C (A)
1.4 0.5
20
VOLTAGE VCE(sat) (V)
1.2 0.3
15
12
1.0 10
0.8 8 0.1
6
0.6 4 0.05
0.4 0.03
2
0.2
IB =0mA
0 0.01
0 1 2 3 4 5 6 1 3 10 30 100 300 1k 3k
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
VBE - I C
1.4
COLLECTOR CURRENT I C (A)
VCE =5V
1.2
1.0
0.8
0.6 Pc - Ta
0.4 10
COLLECTOR DISSIPATION PC (W)
0.2
8
0 inf
ini
te
0 0.2 0.4 0.6 0.8 1.0 1.2 he
6 at
BASE-EMITTER VOLTAGE V BE (V) sin
k
C ob - VCB 4
200
OUTPUT CAPACITANCE Cob (pF)
f=1MHz 2
100 No Heat Sink
0
50
0 20 40 60 80 100 120 140 160
30
AMBIENT TMMPERATURE Ta ( C)
10
5
0.05 1 3 10 30 100
COLLECTOR-BASE VOLTAGE V CE (V)
ASO
h FE - I C 5
500 3 10mS
COLLECTOR CURRENT I C (A)
VCE =5V 1mS
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