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SEMICONDUCTOR KTK5131S
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES L B L
DIM MILLIMETERS
2.5 Gate Drive. A _
2.93 + 0.20
Low Threshold Voltage : Vth=0.5 1.5V. B 1.30+0.20/-0.15
C 1.30 MAX
D
2
High Speed. 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
Small Package.
H
1
G 1.90
Enhancement-Mode. H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
P P L 0.55
M 0.20 MIN
MAXIMUM RATING (Ta=25 ) N 1.00+0.20/-0.10
N
C
J
P 7
CHARACTERISTIC SYMBOL RATING UNIT M
K
Drain-Source Voltage VDS 30 V
1. SOURCE
Gate-Source Voltage VGSS 20 V
2. GATE
DC Drain Current ID 50 mA 3. DRAIN
Drain Power Dissipation PD 200 mW
Channel Temperature Tch 150
SOT-23
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KA
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 20 - - mS
Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 15 40
Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 5.5 - pF
Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 1.6 - pF
Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 6.5 - pF
Switching Turn-on Time ton - 140 - nS
VDD=3V, ID=10mA, VGS=0 2.5V
Time Turn-off Time toff - 140 - nS
2001. 10. 23 Revision No : 0 1/3
KTK5131S
2001. 10. 23 Revision No : 0 2/3
KTK5131S
2001. 10. 23 Revision No : 0 3/3
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