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SEMICONDUCTOR KTN2907/A
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
A
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.
Low Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. G B 4.80 MAX
D C 3.70 MAX
Complementary to the KTN2222/2222A.
J
D 0.45
E 1.00
KTN2907/2907A Electrically Similar to 2N2907/2907A.
F 1.27
G 0.85
H 0.45
H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
C
1 2 3
L
M
1. EMITTER
MAXIMUM RATING (Ta=25 ) 2. BASE
3. COLLECTOR
RATING
CHARACTERISTIC SYMBOL UNIT
KTN2907 KTN2907A
Collector-Base Voltage VCBO -60 V
TO-92
Collector-Emitter Voltage VCEO -40 -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Collector Power Dissipation
PC 625 mW
(Ta=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
1999. 4. 9 Revision No : 1 1/4
KTN2907/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA
KTN2907 - - -20
Collector Cut-off Current ICBO VCB=-50V, IE=0 nA
KTN2907A - - -10
Collector-Base Breakdown Voltage * V(BR)CBO IC=-10 A, IE=0 -60 - - V
Collector-Emitter KTN2907 -40 - -
V(BR)CEO IC=-10mA, IB=0 V
Breakdown Voltage KTN2907A -60 - -
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
KTN2907 35 - -
hFE(1) IC=-0.1mA, VCE=-10V
KTN2907A 75 - -
KTN2907 50 - -
hFE(2) IC=-1mA, VCE=-10V
KTN2907A 100 - -
KTN2907 75 - -
DC Current Gain * hFE(3) IC=-10mA, VCE=-10V
KTN2907A 100 - -
KTN2907
hFE(4) * IC=-150mA, VCE=-10V 100 - 300
KTN2907A
KTN2907 30 - -
hFE(5) * IC=-500mA, VCE=-10V
KTN2907A 50 - -
VCE(sat)1 IC=-150mA, IB=-15mA - - -0.4
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=-500mA, IB=-50mA - - -1.6
VBE(sat)1 IC=-150mA, IB=-15mA - - -1.3
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=-500mA, IB=-50mA - - -2.6
Transition Frequency fT VCE=-20V, IC=-50mA, f=100MHz 200 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF
Input Capacitance Cib VBE=-2V, IC=0, f=1MHz - - 30 pF
Turn-On Time ton - 26 45
VCC=-30V, IC=-150mA
Delay Time td - 6.0 10
IB1=-15mA
Switching Rise Time tr - 20 40
nS
Time Turn-Off Time toff - 70 100
VCC=-6V, IC=-150mA
Storage Time tstg - 50 80
IB1=-IB2=-15mA
Fall Time tf - 20 30
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1999. 4. 9 Revision No : 1 2/4
KTN2907/A
1999. 4. 9 Revision No : 1 3/4
KTN2907/A
1999. 4. 9 Revision No : 1 4/4
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