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SEMICONDUCTOR KU390N10P
TECHNICAL DATA N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
TENTATIVE
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
A
O
Synchronous Rectification and a load switch in battery powered C
applications F
E G DIM MILLIMETERS
A _
9.9 + 0.2
FEATURES B
B 15.95 MAX
VDSS= 100V, ID= 40A Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
Drain-Source ON Resistance : E _
3.6 + 0.2
RDS(ON)=39m (Max.) @VGS = 10V K P F _
2.8 + 0.1
M G 3.7
L
H 0.5+0.1/-0.05
MAXIMUM RATING (Tc=25 ) J I 1.5
D J _
13.08 + 0.3
N N H K 1.46
CHARACTERISTIC SYMBOL RATING UNIT L _
1.4 + 0.1
M _
1.27 + 0.1
N _
2.54 + 0.2
Drain-Source Voltage VDSS 100 V O _
4.5 + 0.2
1 2 3 P _
2.4 + 0.2
Gate-Source Voltage VGSS 20 V 1. GATE
_
2. DRAIN Q 9.2 + 0.2
3. SOURCE
@TC=25 40
ID
Drain Current @TC=100 24 A
Pulsed (Note1) IDP 80*
TO-220AB
Single Pulsed Avalanche Energy EAS 60 mJ
(Note 2)
Repetitive Avalanche Energy EAR 8 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 63 W
PD
Dissipation Derate above 25 0.5 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.0 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2010. 10. 29 Revision No : 0 1/2
KU390N10P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 100 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.11 - V/
Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=20A - 31 39 m
Dynamic
Total Gate Charge Qg - 44 -
VDS=80V, ID=40A
Gate-Source Charge Qgs - 13 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 17 -
Turn-on Delay time td(on) - 40 -
VDD=50V
Turn-on Rise time tr - 120 -
ID=40A ns
Turn-off Delay time td(off) - 80 -
RG=25 (Note4,5)
Turn-off Fall time tf - 40 -
Input Capacitance Ciss - 2000 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 170 - pF
Reverse Transfer Capacitance Crss - 80 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 25
VGS
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