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SEMICONDUCTOR KF3N50FZ/FS
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A C
This planar stripe MOSFET has better characteristics, such as fast
F
switching time, fast reverse recovery time, low on resistance, low gate
O
charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS
B
electronic ballast and switching mode power supplies. A _
10.16 + 0.2
G
B _
15.87 + 0.2
C _
2.54 + 0.2
FEATURES D _
0.8 + 0.1
E _
3.18 + 0.1
VDSS= 500V, ID= 3A
K
F _
3.3 + 0.1
Drain-Source ON Resistance : RDS(ON)=2.5 (Max) @VGS = 10V L
G _
12.57 + 0.2
M H _
0.5 + 0.1
R
Qg(typ) = 7.50nC
J
J _
13.0 + 0.5
trr(typ) = 120ns (KF3N50FS) D
K _
3.23 + 0.1
L 1.47 MAX
trr(typ) = 300ns (KF3N50FZ)
M 1.47 MAX
N N H
N _
2.54 + 0.2
O _
6.68 + 0.2
Q _
4.7 + 0.2
MAXIMUM RATING (Tc=25 )
R _
2.76 + 0.2
1 2 3
Q
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 3*
TO-220IS (1)
ID
Drain Current @TC=100 1.8* A
Pulsed (Note1) IDP 7*
Single Pulsed Avalanche Energy EAS 110 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 10 V/ns
(Note 3)
Drain Power Tc=25 25 W
PD
Dissipation Derate above 25 0.2 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 5.0 /W
Thermal Resistance, Junction-to-
RthJA 62.5 /W
Ambient
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
G
S
2010. 11. 29 Revision No : 0 1/2
KF3N50FZ/FS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.5A - 2.0 2.5
Dynamic
Total Gate Charge Qg - 8.0 -
VDS=400V, ID=3A
Gate-Source Charge Qgs - 2.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 3.5 -
Turn-on Delay time td(on) - 15 -
VDD=250V
Turn-on Rise time tr - 20 -
ID=3A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 350 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 45 - pF
Reverse Transfer Capacitance Crss - 4.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 3
VGS
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