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SEMICONDUCTOR KF2N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF2N60P
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
0.8 + 0.1
FEATURES I
E _
3.6 + 0.2
VDSS= 600V, ID= 2A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=4.4 (Max) @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 6.0nC J J _
13.08 + 0.3
D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Ta=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE
KF2N60P KF2N60F 2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V TO-220AB
@TC=25 2 2*
ID
Drain Current @TC=100 1.3 1.3* A
KF2N60F
Pulsed (Note1) IDP 4 4*
A C
Single Pulsed Avalanche Energy EAS 60 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 2.3 mJ E DIM MILLIMETERS
(Note 1)
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
D _
0.8 + 0.1
Drain Power Tc=25 50 28.4 W
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 0.4 0.23 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
L M
Maximum Junction Temperature Tj 150 R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics M 1.47 MAX
N N H
N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case RthJC 2.5 4.4 /W O _
6.68 + 0.2
Q _
4.7 + 0.2
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W 1. GATE R _
2.76 + 0.2
Ambient 1 2 3
Q
2. DRAIN
* : Drain current limited by maximum junction temperature. 3. SOURCE
* Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
(KF2N60P, KF2N60F)
D
G
S
2011. 4. 29 Revision No : 0 1/2
KF2N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.61 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.0A - 3.7 4.4
Dynamic
Total Gate Charge Qg - 6.0 -
VDS=480V, ID=2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.8 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 20 -
ID=2A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 270 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 35 - pF
Reverse Transfer Capacitance Crss - 3.9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 2
VGS
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