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SEMICONDUCTOR KF5N50DZ/IZ
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
KF5N50DZ
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for C D L
A _
6.60 + 0.20
electronic ballast and switching mode power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
FEATURES F _
2.30 + 0.10
G 0.96 MAX
VDSS= 500V, ID= 4.3A
H 0.90 MAX
H
Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 12nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
N 0.70 MIN
1 2 3 1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
DPAK (1)
@TC=25 4.3
ID
Drain Current @TC=100 2.7 A
Pulsed (Note1) IDP 13
Single Pulsed Avalanche Energy KF5N50IZ
EAS 270 mJ
(Note 2) A H
C J
Repetitive Avalanche Energy EAR 8.6 mJ
D
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 20 V/ns
B
DIM MILLIMETERS
(Note 3)
A _
6.6 + 0.2
Drain Power Tc=25 59.5 W M B _
6.1 + 0.2
PD
K
C _
5.34 + 0.3
Dissipation Derate above 25 0.48 W/ P
D _
0.7 + 0.2
N
E _
9.3 +0.3
Maximum Junction Temperature Tj 150
E
F _
2.3 + 0.2
G _
0.76 + 0.1
Storage Temperature Range Tstg -55 150 G _
H 2.3 + 0.1
L J _
0.5+ 0.1
Thermal Characteristics F F
K _
1.8 + 0.2
Thermal Resistance, Junction-to-Case RthJC 2.1 /W L _
0.5 + 0.1
M _
1.0 + 0.1
Thermal Resistance, Junction-to- 1 2 3 N 0.96 MAX
RthJA 110 /W
Ambient P _
1.02 + 0.3
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF5N50DZ/IZ)
D IPAK(1)
G
S
2011. 5. 23 Revision No : 0 1/6
KF5N50DZ/IZ
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.55 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 10
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=2.15A - 1.10 1.4
Dynamic
Total Gate Charge Qg - 12 -
VDS=400V, ID=5A
Gate-Source Charge Qgs - 2.4 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.4 -
Turn-on Delay time td(on) - 22.5 -
VDD=250V
Turn-on Rise time tr - 29 -
ID=5A ns
Turn-off Delay time td(off) - 58 -
RG=25 (Note4,5)
Turn-off Fall time tf - 18 -
Input Capacitance Ciss - 430 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 71 - pF
Reverse Transfer Capacitance Crss - 7.5 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 5
VGS
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