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SEMICONDUCTOR
TECHNICAL DATA
KGT20N60KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency A B
O S K
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
DIM MILLIMETERS
C
A _
15.90 + 0.30
J
B _
5.00 + 0.20
FEATURES C _
20.85 + 0.30
D _
3.00 + 0.20
High speed switching _
E 2.00 + 0.20
G
High system efficiency F _
1.20 + 0.20
D M G Max. 4.50
Short Circuit Withstand Times 10us H _
20.10 + 0.70
H
E _
I 0.60 + 0.02
Extremely enhanced avalanche capability J _
I 14.70 + 0.20
F _
K 2.00 + 0.10
M _
2.40 + 0.20
O _
3.60 + 0.30
P P P _
5.45 + 0.30
Q _
3.60 + 0.20
R _
7.19 + 0.10
1 2 3
1. GATE S
2. COLLECTOR
3. EMITTER
TO-247
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES 20 V C
@Tc=25 40 A
Collector Current IC
@Tc=100 20 A
Pulsed Collector Current ICM* 60 A G
Diode Continuous Forward @Tc=25 IF 20 A
Diode Maximum Forward Current IFM* 60 A E
@Tc=25 192 W
Maximum Power Dissipation PD
@Tc=100 77 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
E
THERMAL CHARACTERISTIC C
G
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.65 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.55 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2012. 2. 24 Revision No : 0 1/8
KGT20N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250 600 - - V
Collector Cut-off Current ICES VGE=0V, VCE=600V - - 250
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=2mA 4.5 5.5 7.0 V
VGE=15V, IC=20A - 1.80 2.20 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=20A, TC = 125 - 2.10 - V
VGE=15V, IC=40A, TC = 25 - 2.55 - V
Dynamic
Total Gate Charge Qg - 110 - nC
Gate-Emitter Charge Qge VCC=300V, VGE=15V, IC= 20A - 17 - nC
Gate-Collector Charge Qgc - 60 - nC
Turn-On Delay Time td(on) - 34 - ns
Rise Time tr - 24 - ns
Turn-Off Delay Time td(off) - 110 - ns
VCC=300V, IC=20A, VGE=15V,RG=10
Fall Time tf - 35 - ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 0.3 - mJ
Turn-Off Switching Loss Eoff - 0.3 - mJ
Total Switching Loss Ets - 0.6 - mJ
Turn-On Delay Time td(on) - 34 - ns
Rise Time tr - 24 - ns
Turn-Off Delay Time td(off) - 125 - ns
VCC=300V, IC=20A, VGE=15V,RG=10
Fall Time tf - 35 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 0.3 - mJ
Turn-Off Switching Loss Eoff - 0.3 - mJ
Total Switching Loss Ets - 0.6 - mJ
Input Capacitance Cies - 2000 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 110 - pF
Reverse Transfer Capacitance Cres - 60 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100 10 - - s
Marking
KGT 1 Device Mark
20N60KDA
001 2 Lot No
2012. 2. 24 Revision No : 0 2/8
KGT20N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.7 2.5
Diode Forward Voltage VF IF = 20A V
TC=125 - 1.4 -
TC=25 - 50 -
Diode Reverse Recovery Time trr ns
TC=125 - 80 -
VCE = 300V
TC=25 - 12 -
Diode Peak Reverse Recovery Current Irr IF = 20A A
TC=125 - 14 -
di/dt = -600A/ s
TC=25 - 670 -
Diode Reverse Recovery Charge Qrr nC
TC=125 - 750 -
2012. 2. 24 Revision No : 0 3/8
KGT20N60KDA
Typical Performance Characteristics
Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics
100 100
20V Common Emitter
90 15V 90 VGE = 15V
Collector Current IC (A)
Collector Current IC (A)
TC = 125 C
80 80
TC = 25 C
70 70
60 60
50 12V 50
40 40
TC = 125 C
30 30
20 10V 20
10 10
0 0
0 2 4 6 8 10 0 1 2 3 4
Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)
Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE
3.5 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)
Common Emitter Common Emitter
VGE = 15V TC = 25 C
16
3.0
IC = 40A 12
2.5
IC = 20A
8
2.0 IC =20A IC = 10A IC = 40A
4
1.5 0
0 20 40 60 80 100 120 140 0 4 8 12 16 20
Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)
Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics
20 3000
Collector - Emitter Voltage VCE (V)
Common Emitter
Common Emitter
VGE = 0V, f = 1MHZ
TC = 125 C
2500 TC = 25 C
16
Cies
Capacitance (pF)
2000
12
1500
IC = 20A
8
IC = 40A 1000
IC = 10A Coes
4
500
Cres
0 0
0 4 8 12 16 20 1 10 100
Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)
2012. 2. 24 Revision No : 0 4/8
KGT20N60KDA
Typical Performance Characteristics (Continued)
Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance
100 1000
Common Emitter
VCC = 300V, VGE = 15V
IC = 20A
TC =25 C
Switching Time (ns)
Switching Time (ns)
TC = 125 C
td(on)
td(off)
100
tr
Common Emitter tf
VCC = 300V, VGE = 15V
IC = 20A
25
TC =25 C
TC = 125 C
10 10
0 20 40 60 0 10 20 30 40 50
Gate Resistance RG () Gate Resistance RG ()
Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current
10 100
Switching Time (ns)
Switching Loss (mJ)
1 Eon
td(on)
Eoff
0.1 Common Emitter
VCC = 300V, VGE = 15V tr Common Emitter
IC = 20A VCC = 300V, RG = 10
TC =25 C TC = 25 C
TC = 125 C TC = 125 C
0.01 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance RG () Collector Current IC ()
Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current
1000 10
Common Emitter Common Emitter
VCC = 300V, RG = 10 VCC = 300V, RG = 10
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C Eon
Switching Loss (mJ)
Switching Time (ns)
1
td(off)
Eoff
100
tf
1.0
10 0.01
0 10 20 30 40 50 0 10 20 30 40 50
Collector Current IC () Collector Current IC ()
2012. 2. 24 Revision No : 0 5/8
KGT20N60KDA
Typical Performance Characteristics (Continued)
Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics
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