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SEMICONDUCTOR
TECHNICAL DATA
KGT50N60KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency O
A
S
B
K
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters. DIM MILLIMETERS
C
A _
15.90 + 0.30
J
B _
5.00 + 0.20
C _
20.85 + 0.30
FEATURES D _
3.00 + 0.20
E _
2.00 + 0.20
High speed switching
G
F _
1.20 + 0.20
D
High system efficiency M G Max. 4.50
_
H 20.10 + 0.70
H
E
Short Circuit Withstand Times 10us I _
0.60 + 0.02
I J _
14.70 + 0.20
F
Extremely enhanced avalanche capability K _
2.00 + 0.10
M _
2.40 + 0.20
O _
3.60 + 0.30
P P P _
5.45 + 0.30
Q _
3.60 + 0.20
R _
7.19 + 0.10
1 2 3
S
TO-247
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 600 V
Gate-Emitter Voltage VGES 20 V
C
@Tc=25 100 A
Collector Current IC
@Tc=100 50 A
Pulsed Collector Current ICM* 150 A
G
Diode Continuous Forward Current @Tc=100 IF 50 A
Diode Maximum Forward Current IFM 100 A
345 W E
@Tc=25
Maximum Power Dissipation PD
@Tc=100 138 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
E
CHARACTERISTIC SYMBOL MAX. UNIT C
G
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.36 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 1.0 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2011. 5. 25 Revision No : 0 1/8
KGT50N60KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=250 A 600 - - V
Collector Cut-off Current ICES VGE=0V, VCE=600V - - 250 A
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=5mA 5.0 6.0 7.0 V
VGE=15V, IC=50A - 1.90 2.2 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=100A - 2.6 - V
VGE=15V, IC=50A, TC = 125 - 2.20 - V
Dynamic
Total Gate Charge Qg - 200 - nC
Gate-Emitter Charge Qge VCC=300V, VGE=15V, IC= 50A - 30 - nC
Gate-Collector Charge Qgc - 100 - nC
Turn-On Delay Time td(on) - 95 - ns
Rise Time tr - 85 - ns
Turn-Off Delay Time td(off) - 340 - ns
VCC=300V, IC=50A, VGE=15V,RG=10
Fall Time tf - 40 - ns
Inductive Load, TC = 25 (Note 1)
Turn-On Switching Loss Eon - 1.40 - mJ
Turn-Off Switching Loss Eoff - 0.80 - mJ
Total Switching Loss Ets - 2.2 - mJ
Turn-On Delay Time td(on) - 95 - ns
Rise Time tr - 90 - ns
Turn-Off Delay Time td(off) - 350 - ns
VCC=300V, IC=50A, VGE=15V, RG=10
Fall Time tf - 50 - ns
Inductive Load, TC = 125 (Note 1)
Turn-On Switching Loss Eon - 1.5 - mJ
Turn-Off Switching Loss Eoff - 1.2 - mJ
Total Switching Loss Ets - 2.7 - mJ
Input Capacitance Cies - 4000 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 250 - pF
Reverse Transfer Capacitance Cres - 130 - pF
Short Circuit Withstand Time tsc VCC=300V, VGE=15V, TC=100 10 - - s
Note 1 : Energy loss include tail current and diode reverse recovery.
Marking
KGT
50N60KDA
025
1 Device Mark 1
2 Device Mark 2
3 Lot No
2011. 5. 25 Revision No : 0 2/8
KGT50N60KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.7 2.5
Diode Forward Voltage VF IF = 50A V
TC=100 - 2.0 -
TC=25 - 100 200
Diode Reverse Recovery Time trr ns
TC=100 - 120 -
IF = 50A TC=25 - 20 40
Diode Peak Reverse Recovery Current Irr A
di/dt = 600A/ s TC=100 - 30 -
TC=25 - 1.2 3.5
Diode Reverse Recovery Charge Qrr C
TC=100 - 2.2 -
2011. 5. 25 Revision No : 0 3/8
KGT50N60KDA
Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics
180 180
20V 15V TC = 25 C
12V TC = 125 C
Collector Current IC (A)
Collector Current IC (A)
150 150 TC = 150 C
120 120
90 90
10V
60 60
30 VGE=8V
30
0 0
0 2 4 6 8 0 1 2 3 4 5
Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V)
Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE
4.0 20
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)
Common Emitter
TC = 25 C
3.5
16
100A
3.0
12
2.5 50A
50A
8
2.0 75A
IC = 25A
IC=30A 4
1.5
1.0 0
25 50 75 100 125 150 0 4 8 12 16 20
Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V)
Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics
20 6500
Collector - Emitter Voltage VCE (V)
Common Emitter
Common Emitter 6000 VGE = 0V, f = 1MHZ
TC = 125 C
5500 TC = 25 C
16
5000
4500 Ciss
Capacitance (pF)
12 4000
50A
3500
75A 3000
8 2500
2000
IC = 25A
4 1500
1000 Crss
Coss
500
0 0
0 4 8 12 16 20 1 10 100
Gate - Emitter Voltage VGE (V) Collector - Emitter Voltage VCE (V)
2011. 5. 25 Revision No : 0 4/8
KGT50N60KDA
Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance
1,000.0 1,000.0
td(off)
Switching Time (ns)
Switching Time (ns)
td(on)
tr
100.0 100.0
tf
Common Emitter Common Emitter
VCC = 600V, VGE = 15V VCC = 600V, VGE = 15V
IC = 50A IC = 50A
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
10.0 10.0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Gate Resistance RG () Gate Resistance RG ()
Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current
10 1,000.0
Switching Time (ns)
Switching Loss (mJ)
Eon td(on)
1 100.0
Eoff
tr
Common Emitter
VCC = 600V, VGE = 15V Common Emitter
IC = 50A VGE = 15V, RG = 10
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
0.1 10.0
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Gate Resistance RG () Collector Current IC ()
Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Switching Loss vs. Collector Current
1,000.0 10.0
td(off)
Switching Loss (mJ)
Switching Time (ns)
100.0 1.0
tf
Common Emitter Eon Common Emitter
VGE = 15V, RG = 10 VGE = 15V, RG = 10
Eoff
TC = 25 C TC = 25 C
TC = 125 C TC = 125 C
10.0 0.1
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Collector Current IC () Collector Current IC ()
2011. 5. 25 Revision No : 0 5/8
KGT50N60KDA
Fig 13. Gate Charge Characteristics Fig 14. SOA Characteristics
16 1000
Common Emitter
Gate-Emitter Voitage VGE (V)
14 RL = 24
TC = 25 C 400V 100
Collector Current IC (A)
Vcc = 200V
12
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