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SEMICONDUCTOR KHB1D9N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB1D9N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode C D L
_
A 6.60 + 0.20
power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
F _
2.30 + 0.10
FEATURES G 0.96 MAX
H 0.90 MAX
H
VDSS= 600V, ID= 1.9A J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Drain-Source ON Resistance : L _
0.50 + 0.10
F F M M _
0.50 + 0.10
RDS(ON)=5.0 @VGS = 10V N 0.70 MIN
Qg(typ.) = 10.9nC O 0.1 MAX
1 2 3
O
MAXIMUM RATING (Tc=25 )
DPAK (1)
RATING
CHARACTERISTIC SYMBOL UNIT
KHB1D9N60D KHB1D9N60I
KHB1D9N60I
Drain-Source Voltage VDSS 600 V
A H
Gate-Source Voltage VGSS 30 V C J
@TC=25 D
1.9 1.9*
ID
Drain Current @TC=100 1.1 1.1 A
B
DIM MILLIMETERS
A _
6.6 + 0.2
Pulsed (Note1) IDP 7.6 7.6* B _
6.1 + 0.2
M
K
C _
5.34 + 0.3
Single Pulsed Avalanche Energy EAS P
120 mJ D _
0.7 + 0.2
(Note 2) N
E _
9.3 +0.3
E
Repetitive Avalanche Energy EAR F _
2.3 + 0.2
4.4 mJ
(Note 1) G _
0.76 + 0.1
G H _
2.3 + 0.1
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns L J _
0.5 + 0.1
(Note 3) F F
K _
1.8 + 0.2
Drain Power Tc=25 44 28 W L _
0.5 + 0.1
PD M _
1.0 + 0.1
Dissipation Derate above 25 0.35 0.22 W/ 1 2 3 N 0.96 MAX
P _
1.02 + 0.3
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.79 2.79 /W
IPAK(1)
Thermal Resistance, Case-to-Sink RthCS 50 50 /W
Thermal Resistance, Junction-to- D
RthJA 110 110 /W
Ambient
* : Drain current limited by maximum junction temperature.
G
S
2007. 3. 26 Revision No : 2 1/6
KHB1D9N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.65 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.95A - 3.8 5.0
Dynamic
Total Gate Charge Qg - 10.9 12
VDS=480V, ID=1.9A
Gate-Source Charge Qgs - 1.7 3 nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 5.0 5.5
Turn-on Delay time td(on) - - 28
VDD=300V
Turn-on Rise time tr - - 60
RL=158 ns
Turn-off Delay time td(off) - - 58
RG=25 (Note4,5)
Turn-off Fall time tf - - 66
Input Capacitance Ciss - 388 504
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 6.5 8.5 pF
Output Capacitance Coss - 45.7 59.4
Source-Drain Diode Ratings
Continuous Source Current IS - - 1.9
VGS
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