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SEMICONDUCTOR KHB9D0N90NA
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A
This planar stripe MOSFET has better characteristics, such as fast N Q B
O K
switching time, low on resistance, low gate charge and excellent
DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for electronic ballast and _
F
A 15.60 + 0.20
B _
4.80 + 0.20
switching mode power supplies. C _
19.90 + 0.20
C
J
R
_
I
D 2.00 + 0.20
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
FEATURES
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
VDSS(Min.)= 900V, ID= 9A E _
I 12.76 + 0.20
Drain-Source ON Resistance : J _
23.40 + 0.20
L
d M K 1.5+0.15-0.05
RDS(ON)=1.05(Typ.) @VGS =10V L _
16.50 + 0.30
M _
1.40 + 0.20
Qg(typ.) =54nC N _
13.60 + 0.20
P P T
O _
9.60 + 0.20
P _
5.45 + 0.30
Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
MAXIMUM RATING (Tc=25 ) T 0.60+0.15-0.05
1. Gate
CHARACTERISTIC SYMBOL RATING UNIT 2. Drain
3. Source
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS 30 V TO-3P(N)-E
@TC=25 ID 9.0
Drain Current A
Pulsed (Note1) IDP 36
Single Pulsed Avalanche Energy (Note 2) EAS 900 mJ
Repetitive Avalanche Energy (Note 1) EAR 20.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Drain Power Tc=25 280 W
PD
Dissipation Derate above25 2.22 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.45 /W
Thermal Resistance, Case-to-Sink RthCS 0.24 /W
Thermal Resistance, Junction-to-Ambient RthJA 40 /W
Marking
D
1 KHB
9D0N90N
A 725 2
G
S
1 PRODUCT NAME
2 LOT NO
2008. 4. 17 Revision No : 3 1/6
KHB9D0N90NA
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 900 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.99 - V/
Drain Cut-off Current IDSS VDS=900V, VGS=0V, - - 100 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 1.05 1.4
Dynamic
Total Gate Charge Qg - 54 69
VDS=450V, ID=9.0A
Gate-Source Charge Qgs - 12 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 17 -
Turn-on Delay time td(on) - 48 96
VDD=450V,
Turn-on Rise time tr RG=25 , - 80 160
ns
Turn-off Delay time td(off) ID=9.0A - 180 360
tf (Note4,5)
Turn-off Fall time - 140 280
Input Capacitance Ciss - 2663 3462
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 183 238 pF
Reverse Transfer Capacitance Crss - 20 26
Source-Drain Diode Ratings
Continuous Source Current IS - - 9.0
VGS
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