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SEMICONDUCTOR KMB030N30D
TECHNICAL DATA N-Ch Trench MOSFET
General Description
Switching regulator and DC-DC Converter applications.
It s mainly suitable for power management in PC,
portable equipment and battery powered systems.
A H DIM MILLIMETERS
C D J
A _
6.6 + 0.2
B _
6.1 + 0.2
C _
5.33 + 0.1
FEATURES D _
1.08 + 0.2
B E _
2.92 + 0.3
VDSS=30V, ID=30A. F _
2.28 + 0.1
Low Drain-Source ON Resistance. G 1.1 MAX
H _
2.3 + 0.1
M
: RDS(ON)=18m (Max.) @ VGS=10V E J _
0.51+ 0.1
K _
1.01 + 0.1
G N
: RDS(ON)=36m (Max.) @ VGS=4.5V L _
0.51+ 0.1
K M _
0.8 + 0.1
Super High Dense Cell Design. F F L N _
1.5 + 0.2
High Power and Current Handling Capability.
1 2 3
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 30 V DPAK (2)
Gate-Source Voltage VGSS 20 V
DC ID * 30
Drain Current A
Pulsed (Note 1)
IDP * 75
Source-Drain Diode Current IS 20 A D
Drain Power Dissipation (Tc=25 ) PD * 50 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
G
Thermal Resistance, Junction to Case RthJC 3 /W
Thermal Resistance, Junction to Ambient RthJA* 50 /W
S
* : Surface Mounted on FR4 Board, t 10sec.
2007. 3. 22 Revision No : 1 1/5
KMB030N30D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V, 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=24V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.7 2.5 V
VGS=10V, ID=20A (Note 1) - 13 18
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=12A (Note 1) - 23 36
ON State Drain Current ID(ON) VGS=10V, VDS=10V (Note 1) 40 - - A
Forward Transconductance gfs VDS=10V, ID=20A (Note 1) - 16 - S
Source-Drain Diode Forward Voltage VSD IS=20A, VGS=0V (Note 1) 0.94 1.3 V
Dynamic (Note 2)
VDS=15V, ID=20A, VGS=10V (Fig.1) - 15.3 -
Total Gate Charge Qg
VDS=15V, ID=20A, VGS=4.5V (Fig.1) - 7.5 -
nC
Gate-Source Charge Qgs - 2.3 -
VDS=15V, ID=20A, VGS=10V (Fig.1)
Gate-Drain Charge Qgd - 4.2 -
Turn-on Delay time td(on) - 7.6 -
Turn-on Rise time tr VDD=15V, ID=1A, - 23.5 -
ns
Turn-off Delay time td(off) VGS=10V, RG=6 (Fig.2) - 15.8 -
Turn-off Fall time tf - 5 -
Input Capacitance Ciss - 872 -
Output Capacitance Coss VDS=15V, VGS=0V, f=1.0MHz - 196 - pF
Reverse transfer Capacitance Crss - 105 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
2007. 3. 22 Revision No : 1 2/5
KMB030N30D
ID - VDS ID - VGS
20 20
VGS=5V
16
Drain Current ID (A)
Drain Current ID (A)
15
VGS=10,9,8,7,6V VGS=4V
12
10
8
VGS=3V 5
4 125 C 25 C
-55 C
VGS=2V
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.7 1.4 2.1 2.8 3.5 4.2
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
IS - VSD
Vth - Tj
VGS = 0V
Normalized Threshold Voltage Vth
1.3
Reverse Drain Current IS (A)
VDS = VGS 20
1.2 IDS = 250◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo