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2SA1 21 3
TRANSISTOR(PNP) SOT-89-3L
1. BASE
FEATURES
Complementary to 2SC2873 2. COLLECTOR
Small Flat Package
3. EMITTER
Power Amplifier and Switching Applications
Low Saturation Voltage
High Speed Switching Time
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -2 A
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
VCE=-2V, IC=-500mA 70 240
DC current gain hFE
VCE=-2V, IC=-2A 20
Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-50mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-50mA -1.2 V
Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 40 pF
Transition frequency fT VCE=-2V,IC= -0.5A 100 MHz
CLASSIFICATION OF hFE
RANK O Y
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