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                                                                                                           2SA1 661

                                                                                        SOT-89-3L
TRANSISTOR(PNP)

                                                                                        1. BASE
    FEATURES
       Small Flat Package                                                               2. COLLECTOR

       High Current Application
                                                                                        3. EMITTER
       High Voltage
       High Transition Frequency


    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                             Parameter                          Value        Unit
        VCBO         Collector-Base Voltage                                 -120           V
        VCEO         Collector-Emitter Voltage                              -120           V
        VEBO         Emitter-Base Voltage                                       -5         V
         IC          Collector Current                                       -0.8          A
         PC          Collector Power Dissipation                             500          mW
        RJA          Thermal Resistance From Junction To Ambient             250         /W
         Tj          Junction Temperature                                    150           
        Tstg         Storage Temperature                                  -55~+150         


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                Parameter                            Symbol       Test     conditions       Min      Typ    Max              Unit
     Collector-base breakdown voltage                V(BR)CBO   IC= -1mA,IE=0               -120                              V
     Collector-emitter breakdown voltage             V(BR)CEO   IC=-10mA,IB=0               -120                              V
     Emitter-base breakdown voltage                  V(BR)EBO   IE=-1mA,IC=0                   -5                             V
     Collector cut-off current                         ICBO     VCB=-120V,IE=0                              -100             nA
     Emitter cut-off current                           IEBO     VEB=-5V,IC=0                                -100             nA
     DC current gain                                   hFE      VCE=-5V, IC=-100mA             80            240
     Collector-emitter saturation voltage            VCE(sat)   IC=-500mA,IB=-50mA                           -1               V
     Base-emitter voltage                              VBE      VCE=-5V, IC=-500mA                           -1               V
     Collector output capacitance                      Cob      VCB=-10V,IE=0, f=1MHz                        30              pF
                                                                VCE=-5V,IC=-0.1A,
     Transition frequency                               fT                                           120                     MHz
                                                                f=30MHz


    CLASSIFICATION OF hFE
              RANK                            O                             Y
          RANGE                           80

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