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                                                                                                      2SB1 1 8 9


TRANSISTOR(PNP)



FEATURES
   High breakdown voltage
   Complements to 2SD1767


MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                         Parameter                       Value          Units
VCBO          Collector-Base Voltage                             -80           V

VCEO          Collector-Emitter Voltage                          -80           V
VEBO          Emitter-Base Voltage                               -5            V
IC            Collector Current -Continuous                     -0.7           A
PC            Collector Power Dissipation                        0.5           W
TJ            Junction Temperature                              150            
Tstg          Storage Temperature                              -55-150         

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                           Symbol              Test   conditions        MIN   TYP                  MAX    UNIT

     Collector-base breakdown voltage              V(BR)CBO       IC=-50A,IE=0                  -80                                V

     Collector-emitter breakdown voltage           V(BR)CEO       IC=-2mA,IB=0                  -80                                V

     Emitter-base breakdown voltage                V(BR)EBO       IE=-50A,IC=0                  -5                                 V

     Collector cut-off current                       ICBO         VCB=-50V,IE=0                                            -0.5   A

     Emitter cut-off current                         IEBO         VEB=-4V,IC=0                                             -0.5   A

     DC current gain                                  hFE         VCE=-3V,IC=-100mA             82                         390

     Collector-emitter saturation voltage           VCE(sat)      IC=-500mA,IB=-50mA                                       -0.4    V

     Transition frequency                              fT         VCE=-10V,IC=-50mA,f=100MHz          100                         MHz

     Collector output capacitance                     Cob         VCB=-10V,IE=0,f=1MHz                                     20      pF



     CLASSIFICATION OF             hFE
     Rank                                      P                                           Q                           R

     Range                                  82-180                                    120-270          180-390

     Marking                                  BDP                                      BDQ                             BDR

 1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                        Date:2011/05
                                           2SB1 1 8 9

Typical Characteristics                       2SB1189




2




JinYu                     www.htsemi.com
semiconductor

                                              Date:2011/05

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