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2SB1 38 6
TRANSISTOR(PNP)
FEATURES
Low collector saturation voltage,
Execllent current-to-gain characteristics
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -30 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -5 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V
Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 A
DC current gain hFE VCE=-2V,IC=-500mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=-4A,IB=-100mA -1 V
Transition frequency fT VCE=-6V,IC=-50mA,f=30MHz 120 MHz
Collector output capacitance Cob VCB=-20V,IE=0,f=1MHz 60 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82-180 120-270 180-390
Marking BHP BHQ BHR
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SB1 38 6
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
2SB1 38 6
3
JinYu www.htsemi.com
semiconductor
Date:2011/05
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