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                                                                                                                      2SC5345

TRANSISTOR (NPN)
FEATURES                                                                                         SOT-23
     RF amplifier
     High current transition frequency fT=550MHz(Typ.),                                          1. BASE
     [VCE=6V, IE=-1mA]                                                                           2. EMITTER
     Low output capacitance :                                                                    3. COLLECTOR
     Cob=1.4pF(Typ.) [VCB=6V, IE=0]
      Low base time constant and high gain
      Excellent noise response

     Marking: 5345

     MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol              Parameter                        Value            Units
       VCBO       Collector-Base Voltage                       30              V
       VCEO       Collector-Emitter Voltage                    20              V
       VEBO       Emitter-Base Voltage                         4               V
       IC         Collector Current                            20             mA
       PC         Collector Power dissipation                300              mW
       TJ         Junction Temperature                       150               
       Tstg       Storage Temperature                   -55-150                


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
              Parameter                             Symbol                 Test     conditions            MIN   TYP       MAX   UNIT

    Collector-base breakdown voltage                V(BR)CBO        IC=10A, IE=0                           30                    V
    Collector-emitter breakdown voltage             V(BR)CEO        IC=5mA, IB=0                           20                    V
    Emitter-base breakdown voltage                  V(BR)EBO        IE=10A, IC=0                            4                    V
    Collector cut-off current                         ICBO          VCB=30V, IE=0                                         0.5   A
    Emitter cut-off current                           IEBO          VEB=4V, IC=0                                          0.5   A
    DC current gain                                   hFE           VCE=6V, IC=1mA                         40             240
    Collector-emitter saturation voltage            VCE(sat)        IC=10mA, IB=1mA                                       0.3    V
    Transition frequency                               fT           VCE=6V, IC=1mA                              550             MHz
    Collector output capacitance                      Cob           VCB=6V, IE=0, f=1MHz                        1.4             pF


    CLASSIFICATION OF           hFE
    Rank                                        R                                      O                              Y

    Range                                     40-80                                  70-140                      120-240



1




JinYu                                               www.htsemi.com
semiconductor
                                 2SC5345




2




JinYu           www.htsemi.com
semiconductor

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