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                                                                                                                2SC5343

     TRANSISTOR (NPN)
     FEATURES                                                                                  SOT-23
          Excellent hFE Linearity
          Low Noise.


MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                               1. BASE
            Symbol               Parameter                      Value            Units
                                                                                               2. EMITTER
     VCBO              Collector-Base Voltage                     60               V
                                                                                               3. COLLECTOR
     VCEO              Collector-Emitter Voltage                  50               V
     VEBO              Emitter-Base Voltage                       5                V
     IC                Collector Current -Continuous             150              mA
     Ib                Base Current -Continuous                   50              mA
     PC                Collector Power dissipation                0.2              W
     TJ                Junction Temperature                      150               
     Tstg              Storage Temperature                      -55-150            

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                          Symbol           Test       conditions             MIN   TYP      MAX      UNIT

    Collector-base breakdown voltage               V(BR)CBO      IC=100A,IE=0                         60                       V

    Collector-emitter breakdown voltage            V(BR)CEO      IC=10mA,IB=0                         50                       V

    Emitter-base breakdown voltage                 V(BR)EBO      IE=10A,IC=0                           5                       V

    Collector cut-off current                          ICBO      VCB=60V,IE=0                                        0.1      A

    Emitter cut-off current                            IEBO      VEB=5V,IC=0                                         0.1      A

    DC current gain                                    hFE(1)    VCE=6V,IC=2mA                        70             700

    Collector-emitter saturation voltage           VCE(sat)      IC=100mA,IB=10mA                             0.1    0.25      V

    Transition frequency                                 fT      VCE=10V,IC=1mA                       80                      MHz

    Collector output capacitance                        Cob      VCB=10V,IE=0,f=1MHz                                 3.5       pF

                                                                 VCE=6V,Ic=0.1mA,
    Noise figure                                        NF                                                            10      dB
                                                                 f=1KHZ,Rg=10K

    CLASSIFICATION OF            hFE
    Rank                                   O                               Y                  G                       L

    Range                              70-140                           120-240             200-400                 300-700



1




JinYu                                              www.htsemi.com
semiconductor
                                 2SC5343




2




JinYu           www.htsemi.com
semiconductor

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