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SOT-23
TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
High Power Gain
3. COLLECTOR
Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 4 V
IC Collector Current -Continuous 50 mA
PC Collector Power Dissipation 350 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 4 V
Collector cut-off current ICBO VCB=35V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 A
DC current gain hFE(1) VCE=12V, IC=2mA 40 240
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1 V
Transition frequency fT VCE=10V, IC=1mA 100 400 MHz
Power Gain Gpe VCE=6V, IC=1mA, f=10.7MHZ 27 33 dB
CLASSIFICATION OF hFE(1)
Rank R O Y
Range 40-80 70-140 120-240
Marking RR1 RO1 RY1
JinYu www.htsemi.com
semiconductor
2SC2715
JinYu www.htsemi.com
semiconductor
2SC2715
JinYu www.htsemi.com
semiconductor
2SC2715
JinYu www.htsemi.com
semiconductor
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