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TRANSISTOR (NPN)
FEATURES
SOT-89
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat) 1. BASE
Complementary to 2SB766A
MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1
Symbol Parameter Value Units 2
VCBO Collector-Base Voltage 60 V 3. EMITTER 3
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=20V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=10V,IC=500mA 85 340
DC current gain
hFE(2) VCE=5V,IC=1A 50
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V,IC=50mA,f=200MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 20 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
Marking YQ YR YS
JinYu www.htsemi.com
semiconductor
2SD874A
JinYu www.htsemi.com
semiconductor
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