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                                                                                                                    UMD6N
DIGITAL TRANSISTOR (NPN+ PNP)

                                                                                                   SOT-363

 FEATURES
    DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.
    Transistor elements are independent, eliminating interference.
    Mounting cost and area can be cut in half.                                                         1
 External circuit




 MARKING:D6

 Absolute maximum ratings(Ta=25)

             Parameter              Symbol          Limits           Unit
    Collector-base    voltage       V(BR)CBO             50           V
    Collector-emitter voltage       V(BR)CEO             50           V
    Emitter-base     voltage        V(BR)EBO               5          V
    Collector current                    IC              100          mA
    Collector Power dissipation         PC               150          mW
    Junction temperature                 Tj              150          
    Storage temperature                 Tstg       -55~150            

 Electrical characteristics (Ta=25)
                   Parameter                   Symbol          Min.         Typ   Max.    Unit             Conditions
 Collector-base breakdown voltage               V(BR)CBO       50                           V    IC=50A
 Collector-emitter breakdown voltage            V(BR)CEO       50                           V    IC=1mA
 Emitter-base breakdown voltage                 V(BR)EBO        5                           V    IE=50A
 Collector cut-off current                        ICBO                             0.5     A     VCB=50V
 Emitter cut-off current                          IEBO                             0.5     A     VEB=4V
 Collector-emitter saturation voltage           VCE(sat)                           0.3      V    IC=5mA,IB=0.25mA
 DC current transfer ratio                        hFE          100                 600           VCE=5V,IC=1mA
 Input resistance                                 R1           3.29         4.7    6.11   K
 Transition frequency                              fT                       250           MHz    VCE=10V ,IE=-5mA,f=100MHz




1
JinYu                                          www.htsemi.com
semiconductor

                                                                                                               Date:2011/ 05

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