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UMF21N
Power management (dual transistors)
DESCRIPTION
Silicon epitaxial planar transistor SOT-363
FEATURES
2SA2018 and DTC114E are housed independently
in a package.
Power switching circuit in a single package.
Mounting cost and area can be cut in half. 1
APPLICATION
Power management circuit, mobile telephone quiver circuit
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent Circuit MARKING:F21
(3) (2) (1)
DTr2
R1
Tr1 F21
R2
(4) (5) (6)
TR1 MAXIMUM RATINGS Ta=25 unless otherwise noted
Symbol Parameter Value Units
VCBO Collector- Base Voltage -15 V
VCEO Collector-Emitter Voltage -12 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -0.5 A
PC Collector Dissipation 0.15 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
DTR2 Absolute maximum ratings(Ta=25)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -10~40 V
IO 50
Output current mA
IC(MAX) 100
Power dissipation Pd 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
1
JinYu www.htsemi.com
semiconductor
Date:2011/ 05
EMF23
TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-10A, IE=0 -15 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -6 V
Collector cut-off current ICBO VCB= -15 V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=- 6V, IC=0 -0.1 A
DC current gain hFE VCE=-2V, IC=-10mA 270 680
Collector-emitter saturation voltage VCE(sat) IC=-200mA,IB=-10mA -0.25 V
Transition frequency fT VCE=-2V,IC=-10mA, f=100MHz 260 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 6.5 pF
DTR2 Electrical characteristics (Ta=25)
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.5 VCC=5V ,IO=100A
Input voltage V
VI(on) 3 VO=0.3V ,IO=10 mA
Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA
Input current II 0.88 mA VI=5V
Output current IO(off) 0.5 A VCC=50V, VI=0
DC current gain GI 30 VO=5V ,IO=5mA
Input resistance R1 7 10 13 K
Resistance ratio R2/R1 0.8 1 1.2
Transition frequency fT 250 MHz VCE=10V ,IE=-5mA,f=100MHz
2
JinYu www.htsemi.com
semiconductor
Date:2011/ 05
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