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                                                                                                                              UMG3N
General purpose transistors (dual transistors)

                                                                                                           SOT-353


 FEATURES
    Two DTC143T chips in a package
    Mounting possible with SOT-353 automatic mounting machines.                                                    1

    Transistor elements are independent, eliminating interference.
    Mounting cost and area be cut in half.

 Marking: G3
                                      (3)   (2)    (1)
                               R1                  R1
 Equivalent circuit          DTr2                  DTr1


                                    (4)      (5)/(6)




 Absolute maximum ratings (Ta=25)

Symbol                Parameter                              LIMITS        Unit
VCBO       Collector-Base Voltage                                 50         V
VCEO       Collector-Emitter Voltage                              50         V
VEBO       Emitter-Base Voltage                                    5         V
IC         Collector Current -Continuous                          100       mA
PC         Collector Dissipation                                  150      mW
Tj         Junction temperature                                   150       
Tstg       Storage Temperature                              -55~+150        

 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

            Parameter                                     Symbol            Test      conditions    Min      Typ        Max      Unit
 Collector-base breakdown voltage                         V(BR)CBO      IC=50A,IE=0                 50                            V
 Collector-emitter breakdown voltage                      V(BR)CEO      IC=1mA,IB=0                 50                            V
 Emitter-base breakdown voltage                           V(BR)EBO      IE=50A,IC=0                  5                            V
 Collector cut-off current                                  ICBO        VCB=50V,IE=0                                   0.5       uA
 Emitter cut-off current                                    IEBO        VEB=4V,IC=0                                    0.5       uA
 DC current gain                                            hFE         VCE=5V,IC=1mA               100                600
 Collector-emitter saturation voltage                     VCE(sat)      IC=5mA,IB=0.25mA                               0.3        V
 Transition frequency                                        fT         VCE=10V,IE=-5mA, f=100MHz            250                MHz
 Input resistor                                             R1                                      3.29     4.7       6.11      k




1
JinYu                                                      www.htsemi.com
semiconductor

                                                                                                                          Date:2011/ 05

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