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                                                                                                                                 A105
                                                                                                                                    1

TRANSISTOR (PNP)
                                                                                           SOT-23

FEATURES

       High voltage and high current
       Excellent hFE Linearity
                                                                                           1. BASE
       Low niose
                                                                                           2. EMITTER
       Complementary to C1815
                                                                                           3. COLLECTOR



MARKING: BA


MAXIMUM RATINGS (TA=25 unless otherwise noted)

      Symbol                                     Parameter                                 Value                                Units

 VCBO                   Collector-Base Voltage                                                   -50                                   V
 VCEO                   Collector-Emitter Voltage                                                -50                                   V
 VEBO                   Emitter-Base Voltage                                                     -5                                    V
 IC                     Collector Current -Continuous                                            150                                   mA
 PC                     Collector Power Dissipation                                              200                                  mW
 TJ                     Junction Temperature                                                     125                                   
 Tstg                   Storage Temperature                                                 -55-125                                    

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                              Symbol       Test      conditions   MIN             TYP                  MAX         UNIT

      Collector-base breakdown voltage                V(BR)CBO    IC= -100u A, IE=0        -50                                               V

      Collector-emitter breakdown voltage             V(BR)CEO    IC= -0.1mA, IB=0         -50                                               V

      Emitter-base breakdown voltage                  V(BR)EBO    IE= -100 u A, IC=0        -5                                               V

      Collector cut-off current                            ICBO   VCB=-50V ,     IE=0                                           -0.1         uA

      Collector cut-off current                            ICEO   VCE= -50V ,     IB=0                                          -0.1         uA

      Emitter cut-off current                              IEBO   VEB=- 5V,     IC=0                                            -0.1         uA

      DC current gain                                     hFE     VCE=-6V,     IC= -2mA    130                                  400

      Collector-emitter saturation voltage            VCE(sat)    IC=-100 mA, IB= -10mA                                         -0.3         V

      Base-emitter saturation voltage                 VBE(sat)    IC=-100 mA, IB= -10mA                                         -1.1         V
                                                                  VCE=-10V, IC= -1mA
      Transition frequency                                fT                                80                                              MHz
                                                                  f=30MHz

 CLASSIFICATION              OF   hFE

      Rank                                            L                                                H
      Range                                         130-200                                       200-400


  1




 JinYu                                              www.htsemi.com
 semiconductor

                                                                                                                 Date:2011/05
                                                              A105
                                                                 1

    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor

                                               Date:2011/05

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