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BCX7 0J,K
TRANSISTOR (NPN)
SOT-23
FEATURES
Low current
Low voltage
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : BCX70JAJ, BCX70K:AK
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
PC Collector Power Dissipation 250 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 45 V
Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=1A,IC=0 5 V
Collector cut-off current ICES VCE=45V,VBE=0 20 nA
hFE1 VCE=5V,IC=10A 30
DC current gain BCX70J hFE2 VCE=5V,IC=2mA 250 460
hFE3 VCE=1V,IC=50mA 90
hFE1 VCE=5V,IC=10A 100
DC current gain BCX70K hFE2 VCE=5V,IC=2mA 380 630
hFE3 VCE=1V,IC=50mA 100
VCE(sat)1 IC= 10mA IB= 0.25 mA 0.05 0.35 V
Collector-emitter saturation voltage
VCE(sat)2 IC= 50mA IB=1.25 mA 0.1 0.55 V
VBE(sat)1 IC= 10mA IB=-0.25 mA 0.6 0.85 V
Base -emitter saturation voltage
VBE(sat)2 IC= 50mA IB= 1.25 mA 0.7 1.05 V
Base-emitter voltage VBE VCE=5V,IC=2mA 0.55 0.75 V
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 1.7 pF
VCE=5V,IC=200A,
Noise Figure NF 6 dB
f=1KHz,BW=200Hz,RS=2K
Gain-Bandwidth Product fT VCE= 5 V, IC=10mA,f =100 MHz 100 250 MHz
1
JinYu www.htsemi.com
semiconductor
BCX7 0J,K
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
BCX7 0J,K
3
JinYu www.htsemi.com
semiconductor
Date:2011/05
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