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                                                                                                                          CXT5551

    TRANSISTOR (NPN)
                                                                                            SOT-89

FEATURES
          Switching and amplification in high voltage
          Applications such as telephony                                                                   1
                                                                                            1. BASE
          Low current(max. 600mA)                                                           2. COLLECTOR
          High voltage(max.180v)                                                            3. EMITTER


     Marking: 1G6


MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol                   Parameter                        Value         Units
     VCBO          Collector-Base Voltage                      180            V
     VCEO          Collector-Emitter Voltage                   160            V
     VEBO          Emitter-Base Voltage                         6             V
     IC            Collector Current -Continuous                0.6           A
     PC            Collector Power Dissipation                  0.5           W
     TJ            Junction Temperature                        150            
     Tstg          Storage Temperature                       -65-150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                          Symbol             Test   conditions         MIN      TYP              MAX    UNIT

    Collector-base breakdown voltage               V(BR)CBO      IC=100 A,IE=0                  180                               V
    Collector-emitter breakdown voltage            V(BR)CEO      IC=1mA,IB=0                    160                               V
    Emitter-base breakdown voltage                 V(BR)EBO      IE=10  A,IC=0                    6                               V
    Collector cut-off current                        ICBO        VCB=120V,IE=0                                             50    nA
    Emitter cut-off current                          IEBO        VEB=4V,IC=0                                               50    nA
                                                    hFE(1)       VCE=5V,IC=1mA                   80
    DC current gain                                 hFE(2)       VCE=5V,IC=10mA                  80                       300
                                                    hFE(3)       VCE=5V,IC=50mA                  30
                                                    VCE(sat)     IC=10mA,IB=1mA                                           0.15    V
    Collector-emitter saturation voltage
                                                    VCE(sat)     IC=50mA,IB=5mA                                            0.2    V
                                                    VBE(sat)     IC=10mA,IB=1mA                                            1      V
    Base-emitter voltage
                                                    VBE(sat)     IC=50mA,IB=5mA                                            1      V
    Transition frequency                               fT        VCE=10V,IC=10mA,f=100MHz       100                              MHz
    Collector output capacitance                      Cob        VCB=10V,IE=0,f=1MHz                                       6     pF
                                                                 VCE=5V,Ic=0.2mA,
    Noise figure                                      NF                                                                   8     dB
                                                                 f=10Hzto15.7KHZ,Rs=10

1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                           Date:2011/05
                                                              CXT5551

    Typical Characteristosc




2




JinYu                         www.htsemi.com
semiconductor

                                               Date:2011/05

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