Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors HT Semiconductor emd6

<< Back | Home

Most service manuals and schematics are PDF files, so You will need Adobre Acrobat Reader to view : Acrobat Download Some of the files are DjVu format. Readers and resources available here : DjVu Resources
For the compressed files, most common are zip and rar. Please, extract files with Your favorite compression software ( WinZip, WinRAR ... ) before viewing. If a document has multiple parts, You should download all, before extracting.
Good luck. Repair on Your own risk. Make sure You know what You are doing.



Image preview - the first page of the document



>> Download emd6 documenatation <<

Text preview - extract from the document

                                                                                                                        EMD6
DIGITAL TRANSISTOR (NPN+ PNP)


FEATURES                                                                                        SOT-563
   DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.                                       1
   Transistor elements are independent, eliminating interference.
   Mounting cost and area can be cut in half.
External circuit




MARKING:D6

Absolute maximum ratings(Ta=25)

          Parameter               Symbol               Limits        Unit

 Collector-base    voltage        V(BR)CBO              50            V
 Collector-emitter voltage        V(BR)CEO              50            V
 Emitter-base     voltage         V(BR)EBO               5            V
 Collector current                     IC               100          mA

 Collector Power dissipation           PC               150          mW

 Junction temperature                  Tj               150           
 Storage temperature               Tstg              -55~150          

Electrical characteristics (Ta=25)

             Parameter                      Symbol            Min.     Typ      Max.    Unit               Conditions
Collector-base breakdown voltage            V(BR)CBO          50                          V                 IC=50A
Collector-emitter breakdown voltage         V(BR)CEO          50                          V                    IC=1mA
Emitter-base breakdown voltage              V(BR)EBO            5                         V                 IE=50A
Collector cut-off current                     ICBO                               0.5     A                  VCB=50V
Emitter cut-off current                       IEBO                               0.5     A                     VEB=4V
Collector-emitter saturation voltage        VCE(sat)                             0.3      V            IC=5mA,IB=0.25mA
DC current transfer ratio                     hFE             100                600                     VCE=5V,IC=1mA
Input resistance                              R1              3.29        4.7    6.11   K
Transition frequency                           fT                      250              MHz    VCE=10V ,IE=-5mA,f=100MHz




1
JinYu                                           www.htsemi.com
semiconductor

                                                                                                                 Date:2011/ 05

◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo