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                                                                                                                                          KTC4377


TRANSISTOR (NPN)                                                                           SOT-89

                                                                                           1. BASE
    FEATURES
    Low voltage
                                                                                           2. COLLECTOR        1
                                                                                                                   2
    MAXIMUM RATINGS (TA=25 unless otherwise noted)                                         3. EMITTER
                                                                                                                                      3
    Symbol               Parameter                    Value      Units
    VCBO       Collector-Base Voltage                   30         V
    VCEO       Collector-Emitter Voltage                10         V
    VEBO       Emitter-Base Voltage                      6         V
    IC         Collector Current -Continuous             2         A
    PC         Collector Power Dissipation              0.5        W
    TJ         Junction Temperature                     150        
    Tstg       Storage Temperature                    -55-150      

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                             Symbol       Test       conditions                MIN        TYP                     MAX       UNIT

     Collector-base breakdown voltage                 V(BR)CBO   IC=1mA,IE=0                              30                                          V

     Collector-emitter breakdown voltage              V(BR)CEO   IC=10mA,IB=0                             10                                          V

     Emitter-base breakdown voltage                   V(BR)EBO   IE=1mA,IC=0                              6                                           V

     Collector cut-off current                          ICBO     VCB=30V,IE=0                                                               0.1      A

     Emitter cut-off current                            IEBO     VEB=6V,IC=0                                                                0.1      A

                                                       hFE(1)    VCE=1V,IC=0.5A                         140                                 600
     DC current gain
                                                       hFE(2)    VCE=1V,IC=2A                             70

     Collector-emitter saturation voltage             VCE(sat)   IC=2A,IB=50mA                                                              0.5       V

     Base-emitter voltage                               VBE      VCE=1V,IC=2A                                                               1.5       V

     Transition frequency                                fT      VCE=1V,IC=0.5A                                    150                               MHz

     Collector output capacitance                       Cob      VCB=10V,IE=0,f=1MHz                                   27                             pF



     CLASSIFICATION OF            hFE(1)
     Rank                                    A                            B                      C                                           D

     Range                                 140-240                     200-330                300-450                                      420-600

     Marking                                 SA                           SB                     SC                                          SD



1




JinYu                                                www.htsemi.com
semiconductor

                                                                                                                       Date:2011/05
                                                          KTC4377
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05

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