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TRANSISTOR (NPN) SOT-89
1. BASE
FEATURES
High voltage
2. COLLECTOR 1
2
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER
3
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.1 A
hFE(1) VCE=2V,IC=0.05A 100 320
DC current gain
hFE(2) VCE=2V,IC=1A 30
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Transition frequency fT VCE=10V,IC=50mA 150 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF
CLASSIFICATION OF hFE(1)
Rank Y GR
Range 100-200 160-320
Marking TY TGR
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
KTC4378
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
KTC4378
3
JinYu www.htsemi.com
semiconductor
Date:2011/05
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