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                                                                                                                          KTD1302


TRANSISTOR (NPN)                                                                    SOT-89-3L


    FEATURES
       Small Flat Package                                                           1. BASE

       Audio Muting Application                                                     2. COLLECTOR
       High Emitter-Base Voltage
                                                                                    3. EMITTER




    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                          Parameter                           Value         Unit
        VCBO      Collector-Base Voltage                                   25            V
        VCEO      Collector-Emitter Voltage                                20            V
        VEBO      Emitter-Base Voltage                                     12            V
         IC       Collector Current                                       300           mA
         PC       Collector Power Dissipation                             500           mW
        RJA       Thermal Resistance From Junction To Ambient             250           /W
         Tj       Junction Temperature                                    150            
        Tstg      Storage Temperature                                 -55~+150           


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                           Symbol          Test    conditions          Min   Typ                  Max    Unit
     Collector-base breakdown voltage              V(BR)CBO      IC=0.1mA,IE=0                 25                                 V
     Collector-emitter breakdown voltage           V(BR)CEO      IC=1mA,IB=0                   20                                 V
     Emitter-base breakdown voltage                V(BR)EBO      IE=0.1mA,IC=0                 12                                 V
     Collector cut-off current                       ICBO        VCB=25V,IE=0                                             100    nA
     Emitter cut-off current                         IEBO        VEB=12V,IC=0                                             100    nA
                                                  hFE(1) (FOR)   VCE=2V, IC=4mA                200                        800
     DC current gain
                                                  hFE(2)(REV)    VCE=2V, IC=4mA                20
     Collector-emitter saturation voltage          VCE(sat)      IC=100mA,IB=10mA                                         0.25    V
     Base-emitter saturation voltage                VBE(sat)     IC=100mA,IB=10mA                                          1      V
     Collector output capacitance                    Cob         VCB=10V,IE=0, f=1MHz                10                          pF
                                                                 VCE=10V,IC=1mA,
     Transition frequency                              fT                                            60                          MHz
                                                                 f=100MHz




1




JinYu                                           www.htsemi.com
semiconductor

                                                                                                           Date:2011/05

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