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TRANSISTOR (NPN)                                                                 SOT-89-3L

    FEATURES                                                                     1. BASE
       Small Flat Package
       General Purpose Application                                               2. COLLECTOR

                                                                                 3. EMITTER

    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                          Parameter                        Value         Unit
        VCBO      Collector-Base Voltage                               100            V
        VCEO      Collector-Emitter Voltage                             80            V
        VEBO      Emitter-Base Voltage                                   5            V
         IC       Collector Current                                      1            A
         PC       Collector Power Dissipation                          500           mW
        RJA       Thermal Resistance From Junction To Ambient          250           /W
         Tj       Junction Temperature                                 150            
        Tstg      Storage Temperature                              -55~+150           

    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                Parameter                          Symbol       Test    conditions          Min   Typ                  Max      Unit
     Collector-base breakdown voltage              V(BR)CBO   IC=0.1mA,IE=0                 100                                  V
     Collector-emitter breakdown voltage           V(BR)CEO   IC=1mA,IB=0                   80                                   V
     Emitter-base breakdown voltage                V(BR)EBO   IE=0.1mA,IC=0                   5                                  V
     Collector cut-off current                       ICBO     VCB=80V,IE=0                                              1       

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