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   Epitaxial planar die construction
   Complementary NPN Type available(MMBT2222A)                                              1. BASE
                                                                                            2. EMITTER

Marking: 2F                                                                                 3. COLLECTOR

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                        Parameter                       Value         Units
VCBO         Collector-Base Voltage                            -60             V
VCEO         Collector-Emitter Voltage                         -60             V
VEBO         Emitter-Base Voltage                               -5             V
IC           Collector Current -Continuous                     -600            mA
PD           Total Device Dissipation                          250             mW
RJA          Thermal Resistance Junction to Ambient            500           /W
TJ           Junction Temperature                              150             
Tstg         Storage Temperature                            -55 to +150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                  Parameter                    Symbol            Test     conditions          MIN        TYP   MAX    UNIT
     Collector-base breakdown voltage          V(BR)CBO       IC=-10A,IE=0                     -60                      V
     Collector-emitter breakdown voltage       V(BR)CEO*      IC=-10mA,IB=0                    -60                      V
     Emitter-base breakdown voltage            V(BR)EBO       IE=-10A,IC=0                     -5                       V
     Collector cut-off current                    ICBO        VCB=-50V,IE=0                                    -20     nA
     Base cut-off current                         IEBO        VCE=-3V, IC =0                                   -10     nA
     Collector cut-off current                    ICEX        VCE=-30 V, VBE(off) =-0.5V                       -50     nA
                                                 hFE(1)       VCE=-10V,IC=-150mA              100              300
                                                 hFE(2)       VCE=-10V,IC=-0.1mA               75
     DC current gain                             hFE(3)       VCE=-10V,IC=-1mA                100
                                                 hFE(4)       VCE=-10V,IC=-10mA               100
                                                 hFE(5)       VCE=-10V,IC=-500mA               50
                                                VCE(sat)*     IC=-150mA,IB=-15mA                               -0.4     V
     Collector-emitter saturation voltage
                                                VCE(sat)*     IC=-500mA,IB=-50mA                               -1.6     V
                                                VBE(sat)*     IC=-150mA,IB=-15mA                               -1.3     V
     Base-emitter saturation voltage
                                                VBE(sat)*     IC=-500mA,IB=-50mA                               -2.6     V
     Transition frequency                          fT         VCE=-20V,IC=-50mA,f=100MHz      200                     MHz
     Delay time                                    td                                                          10      nS
     Rise time                                     tr                                                          25      nS
     Storage time                                  tS         VCE=-6V,IC=-150mA,                               225     nS
     Fall time                                     tf         IB1=- IB2=- 15mA                                 60      nS
*Pulse test: tp300S, 0.02.

        Typical Characteristics                    MMBT2907A




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