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MMBT4401
TRANSISTOR(NPN)
SOT-23
FEATURES
Switching transistor
1. BASE
MARKING: MMBT4401=2X 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 600 mA
PC Collector Power dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55to +150
RJA Thermal Resistance, junction to Ambient 357 /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V
Collector cut-off current ICBO VCB=50 V, IE=0 0.1 A
Collector cut-off current ICEO VCE=30 V, IB=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE VCE=1V, IC=150mA 100 300
Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V
VCE= 10V, IC= 20mA
Transition frequency fT 250 MHz
f = 100MHz
1
JinYu www.htsemi.com
semiconductor
Date:201/5
MMBT4401
2
JinYu www.htsemi.com
semiconductor
Date:201/5
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